inchange semiconductor isc product specification isc silicon npn power transistor 2SC4313 description collector-emitter sustaining voltage- : v ceo(sus) = 800v(min) fast switching speed applications color tv horizontal output applications absolute maximum ratings(ta=25 ) symbol parameter value unit v cbo collector-base voltage 900 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cm collector current-peak 20 a i b b base current-continuous 4 a i bm base current-peak 8 a p t total power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.2 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4313 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0 800 v v ce(sat) collector-emitter saturation voltage i c = 5a; i b = 1a b 1.5 v v be(sat) base-emitter saturation voltage i c = 5a; i b = 1a b 2.5 v i cbo collector cutoff current at rated voltage 100 a i ceo collector cutoff current at rated voltage 200 a i ebo emitter cutoff current at rated voltage 100 a h fe-1 dc current gain i c = 5a; v ce = 2v 7 h fe-2 dc current gain i c = 1ma; v ce = 2v 5 f t current-gain?bandwidth product i c = 1a; v ce = 10v 7 mhz switching times t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time i c = 5a, i b1 = -i b2 = 1a; r l = 50 ; v bb2 = 4v; v cc = 250v 0.5 s isc website www.iscsemi.cn 2
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